Japanese memory chip manufacturer Toshiba announced yesterday that it will be showcasing a 128 GB NAND-flash-based solid-state drive (SSD) at the Consumer Electronics Show in Las Vegas in early January.
Intel, STMicroelectronics and private equity firm Francisco Partners plan to form an independent flash memory company in Switzerland, the companies said on Tuesday.
Korea's second largest supermarket chain is counting on RFID to understand its customers a bit better.
Samsung is warning its customers that NAND flash memory might be hard to come by for some time after Apple placed a large order, according to a report out of Taiwan.
Korean electronics giant Samsung has made a US$5.85 billion hostile bid to acquire US-based computer chip maker SanDisk.
Microsoft and Samsung showed off a prototype hard drive on Monday that can record data while idling, a twist that has the potential to significantly cut power consumption in notebooks.
Standards came first to PCs, then to servers and mobile phones. Will cameras be next?
Hewlett-Packard has released its final Alpha processor, the beginning of the end for a chip dynasty that never was.
Future headhoncho Paul Otellini will be the first non-engineer to take the helm at Intel, which is struggling to regain its footing.
Chipmaker turns to a more-is-better approach, downplaying chip speeds in favour of new features and designs.
The Korean electronics giant says it has developed the world's fastest mobile CPU, which runs at a core speed of 533MHz, and outpaces Intel's processor. But for how long?
Microsoft and Samsung have announced they have teamed up to develop a design for low-cost handhelds, a market dominated by rival Palm.
The X15 Plus is an interesting enough notebook, but screen issues and a lacklustre bundled software package make it less enticing.
Third-generation mobile technology has arrived, duly accompanied by a barrage of hype. But the industry is already casting its eyes forward to the next big thing - 4G.
Memory makers are shifting gears to boost production of a high-speed version of double data rate DRAM, the result of a shift in the Intel product line.
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